? ? diode module 50a/1200v/1600v maximum ratings approx net weight:180g type / grade parameter parameter parameter parameter symbol PT5112 pt5116 unit repetitive peak reverse voltage *1 v rrm 1200 1600 non repetitive peak reverse voltage *1 v rsm 1300 1700 v parameter parameter parameter parameter conditions conditions conditions conditions max rated max rated max rated max rated value value value value unit average rectified output current i o(av) 3-phase full wave rectified tc=91 c 50 a surge forward current *1 i fsm 50 hz half sine wave,1pulse non-repetitive 600 a i squared t *1 i 2 t 2msec to 10msec 1800 a 2 s operating junctiontemperature range tjw -40 to +125 c storage temperature range tstg -40 to +125 c isoration voltage viso base plate to terminals, ac1min 2500 v case mounting greased m5 screw 2.4 to 2.8 mounting torque terminals ftor m5 2.4 to 2.8 n ? m electrical ? thermal characteristics characteristics symbol test conditions max. unit peak reverse current *1 i rm v rm = v rrm, tj= 125 c 10 ma peak forward voltage *1 v fm i fm = 50a, tj=25 c 1.3 v rth(j-c) junction to case (total) 0.27 thermal resistance rth(c-f) base plate to heat sink with thermal compound (total) 0.06 c/w *1: value per 1arm features * isolated base * 3 phase bridge circuit * high surge capability * ul recognized, file no. e187184 typical applications * rectified for general use PT5112 pt5116 PT5112 pt5116 PT5112 pt5116 PT5112 pt5116 outline drawing ??? ?
? ? pt511x outline drawing (dimensions in mm) ??? ?
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